ADP3611
polarity reversal of the inductor current to maximize light
load conversion efficiency. DRVLSD can also be pulled
low for reverse voltage protection purposes.
When DRVLSD is low, the low-side driver stays low.
When DRVLSD is high, the low-side driver is enabled and
controlled by the driver signals, as previously described.
Low ? Side Driver Timeout
In normal operation, the DRVH signal tracks the IN
signal and turns off the Q1 high-side switch with a few 10
ns delay (t pdlDRVH ) following the falling edge of the input
signal. When Q1 is turned off, DRVL is allowed to go high,
Q2 turns on, and the SW node voltage collapses to zero. But
in a fault condition such as a high-side Q1 switch
drain-source short circuit, the SW node cannot fall to zero,
Crowbar Function
In addition to the internal low-side drive time-out circuit,
the ADP3611 includes a CROWBAR input pin to provide
a means for additional overvoltage protection. When
CROWBAR goes high, the ADP3611 turns off DRVH and
turns on DRVL. The crowbar logic overrides the overlap
protection circuit, the shutdown logic, the DRVLSD logic,
and the UVLO protection on DRVL. Thus, the crowbar
function maximizes the overvoltage protection coverage in
the application. The CROWBAR can be either driven by
the CLAMP pin of buck controllers, such as the
ADP3207A, or ADP3210, or controlled by an independent
overvoltage monitoring circuit.
Table 5. ADP3611 Truth Table
even when DRVH goes low. The ADP3611 has a timer
circuit to address this scenario. Every time the IN goes low,
a DRVL on-time delay timer is triggered. If the SW node
voltage does not trigger a low-side turn-on, the DRVL
on-time delay circuit does it instead, when it times out with
t SW(TO) delay. If Q1 is still turned on, that is, its drain is
shorted to the source, Q2 turns on and creates a direct short
circuit across the V DCIN voltage rail. The crowbar action
causes the fuse in the V DCIN current path to open. The
opening of the fuse saves the load (CPU) from potential
damage that the high-side switch short circuit could have
caused.
CROWBAR
L
L
L
L
L
L
H
H
UVLO
L
L
L
L
L
H
L
H
SD
H
H
H
H
L
*
*
*
DRVLSD
H
H
L
L
*
*
*
*
IN
H
L
H
L
*
*
*
*
DRVH
H
L
H
L
L
L
L
L
DRVL
L
H
L
L
L
L
H
H
* = Don’t Care
APPLICATION INFORMATION
Supply Capacitor Selection
For the supply input (VCC) of the ADP3611, a local
bypass capacitor is recommended to reduce the noise and
to supply some of the peak currents drawn. Use a 10 m F or
4.7 m F multilayer ceramic (MLC) capacitor. MLC
capacitors provide the best combination of low ESR and
small size, and can be obtained from the following vendors.
Table 6.
where:
Q HSGATE is the total gate charge of the high-side MOSFET.
D V BST is the voltage droop allowed on the high-side
MOSFET drive.
For example, two NTMFS4821N MOSFETs in parallel
have a total gate charge of about 20 nC. For an allowed
droop of 100 mV, the required bootstrap capacitance is
200 nF. A good quality ceramic capacitor should be used,
Vendor
Murata
Taiyo ? Yuden
Part Number
GRM235Y5V106Z16
EMK325F106ZF
Web Address
www.murata.com
www.t ? yuden.com
and derating for the significant capacitance drop of MLCs
at high temperature must be applied. In this example,
selection of 470 nF or even 1 m F would be recommended.
Normally a Schottky diode is recommended for the
Tokin C23Y5V1C106ZP www.tokin.com
Keep the ceramic capacitor as close as possible to the ADP3611.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor
(CBST) and a synchronous MOSFET rectifier (D1), as
shown in Figure 18. Selection of these components can be
done after the high-side MOSFET has been chosen. The
bootstrap capacitor must have a voltage rating that is able
to handle at least 5 V more than the maximum supply
bootstrap diode due to its low forward drop, which
maximizes the drive available for the high-side MOSFET.
Using a synchronous MOSFET rectifier instead of a
Schottky diode has the advantage of an even lower forward
voltage drop. A lower forward voltage drop gives a larger
drive voltage for the high-side MOSFET and a lower
conduction loss for the high-side MOSFET. The bootstrap
diode must also be able to handle at least 5 V more than the
maximum battery voltage. The average forward current
can be estimated by
Q HSGATE
D V BST
voltage. The capacitance is determined by
C BST +
(eq. 1)
I F(AVG) + Q HSGATE f MAX (eq. 2)
where f MAX is the maximum switching frequency of the
controller.
http://onsemi.com
10
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